Chemical Vapour Deposition of Amorphous Silicon with Silanes for Thin Film Transistors –The Influence of the Amorphous Silicon Deposition Temperature–

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Abstract
Amorphous silicon films have been prepared by low pressure chemical vapour deposition of monosilane, disilane and trisilane. The deposition temperatures ranged from 385°C to 555°C. The hydrogen content in the films was approximately 3 atomic percent and the optical band-gap was 1.6∼1.7 eV. Simple inverted staggered thin-film transistors were made with thermal silicon dioxide as the gate insulator. After annealing in a hydrogen radical rich ambient the field-effect mobilities for electrons were as high as 2.0 cm2/V·s and almost independent of temperature from 385°C to 500°C. At higher temperatures the mobility decreased rapidly and was less than 0.1 cm2/V·s at 555°C. These results appeared to be independent of the source gas.