Quantized states inGa1−xInxN/GaNheterostructures and the model of polarized homogeneous quantum wells

Centers of spontaneous and stimulated light emission in ${\mathrm{Ga}}_{1-x}{\mathrm{In}}_x\mathrm{N}/\mathrm{GaN}$ active layers as analyzed in luminescence and photoreflection spectroscopy are modeled under the assumption of polarized laterally homogenous quantum wells. In perturbation to the band structure of wurtzite GaN including experimental polarization fields and band-gap bowing the spectrum of interband transitions is calculated for $0<x<\mathrm{}\mathrm{0.2.}\mathrm{}$ We predict the first transition between quantized electron and hole states to lie close to a maximum in photoreflection and close to the energy of stimulated emission. The level of the main luminescence under low excitation cannot be described in this single-particle picture. These results allow a quantitative treatment of that level, e.g. in models of lower dimensionality.