Development of a new annealing process to allow new top electrode materials for SrBi2Ta2O9 capacitors
- 1 September 1997
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 17 (1-4) , 451-460
- https://doi.org/10.1080/10584589708013019
Abstract
Using the Rapid Thermal Annealing (RTA) process, a technique has been established to obtain SrBi2Ta2O9 (SBT) films which showed well-shaped hysteresis curves without a postannealing process after top electrode deposition, maintaining high remanent polarization (Pr) values. RTA conditions were optimized for nucleation of SBT. The effect of a seed layer on the film properties became obvious. This process allowed top electrode materials other than Pt. High remanent polarization (Pr) values could be also obtained with Pd top electrodes.Keywords
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