Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
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- 2 June 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (22) , 3976-3978
- https://doi.org/10.1063/1.1579852
Abstract
The off-state gate current in AlGaN/GaN high electron mobility transistors is shown to arise from two parallel gate to substrate tunneling paths: a direct path, and a path via deep traps, which are distributed throughout the AlGaN layer and spread over an energy band. A model to calculate this current is given, which shows that trap-assisted tunneling dominates below T∼500 K, and direct tunneling (thermionic field emission) dominates at higher temperatures. A model fit to experimental results yields the following fabrication process sensitive parameters: trap concentration of ∼1013–1015 cm−3, and trap bandwidth of ∼50%–70% of the barrier height located 0.4–0.55 V below the conduction band edge.Keywords
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