Improvement of the thermal stability of NiSi films by using a thin Pt interlayer
- 2 October 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (14) , 2177-2179
- https://doi.org/10.1063/1.1313815
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Stress evolution of Ni/Pd/Si reaction system under isochronal annealingThin Solid Films, 2000
- Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctionsThin Solid Films, 1999
- A study of the NiSi to NiSi2 transition in the Ni–Si binary systemThin Solid Films, 1999
- Stability of NiSi in boron-doped polysilicon linesMicroelectronics Reliability, 1998
- Thermal stability of cobalt and nickel silicidesMicroelectronics Reliability, 1998
- Silicides and ohmic contactsMaterials Chemistry and Physics, 1998
- Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator ApplicationsJournal of the Electrochemical Society, 1997
- Salicidation process using NiSi and its device applicationJournal of Applied Physics, 1997
- Formation of Ni silicide from Ni(Au) films on (111)SiJournal of Applied Physics, 1996
- Analysis of resistance behavior in Ti- and Ni-salicided polysilicon filmsIEEE Transactions on Electron Devices, 1994