Photoluminescence characterization of Ga In1−As (0 ≤ x ≤ 0.32) strained quantum wells grown on InP by chemical beam epitaxy
- 1 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 357-361
- https://doi.org/10.1016/0022-0248(92)90418-i
Abstract
No abstract availableKeywords
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