Effects of interface traps and border traps on MOS postirradiation annealing response
- 1 December 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 42 (6) , 1698-1707
- https://doi.org/10.1109/23.488768
Abstract
No abstract availableThis publication has 85 references indexed in Scilit:
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