Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates
- 1 January 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (2) , 209-211
- https://doi.org/10.1063/1.125704
Abstract
We have fabricated single-electron transistors (SETs) with Si nanocrystal floating gates, and experimentally demonstrated the control of the peak positions of Coulomb blockade oscillations. The positive voltage applied to the gate makes channel electrons tunnel into the floating dots, and the injected electrons raise the potential of quantum dots in SET, resulting in a shift of peak positions of Coulomb blockade oscillations. In addition, from the temperature dependence of device characteristics, it is confirmed that the potential fluctuations caused by random distribution of the Si nanocrystals have a slight influence on the shape of the curves at practical high temperatures.
Keywords
This publication has 17 references indexed in Scilit:
- Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystalsJournal of Applied Physics, 1998
- Silicon single-electron quantum-dot transistor switch operating at room temperatureApplied Physics Letters, 1998
- Quantum mechanical effects in the silicon quantum dot in a single-electron transistorApplied Physics Letters, 1997
- Room temperature operation of Si single-electron memory with self-aligned floating dot gateApplied Physics Letters, 1997
- Characterization of precisely width-controlled Si quantum wires fabricated on SOI substratesPhysica B: Condensed Matter, 1996
- Fast and long retention-time nano-crystal memoryIEEE Transactions on Electron Devices, 1996
- Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrateApplied Physics Letters, 1996
- A silicon nanocrystals based memoryApplied Physics Letters, 1996
- Fabrication technique for Si single-electron transistoroperating at room temperatureElectronics Letters, 1995
- Room-temperature single-electron memoryIEEE Transactions on Electron Devices, 1994