Violet InGaN/GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy Using NH3
- 1 August 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (8A) , L907
- https://doi.org/10.1143/jjap.37.l907
Abstract
GaN and InGaN alloys were grown on c-plane sapphire substrates by molecular beam epitaxy using NH3. This allows realizing light emitting diodes (LEDs) based on InGaN/GaN single heterostructures. The forward voltage is 3.6 V at 20 mA. The room temperature electroluminescence exhibits a strong emission at 405 nm. The I–V characteristics were studied as a function of the temperature. A tunneling process in the transport mechanism is observed as for metal-organic chemical vapor deposition grown LEDs.Keywords
This publication has 14 references indexed in Scilit:
- Real time control of InxGa1−xN molecular beam epitaxy growthApplied Physics Letters, 1998
- GaN based LEDs grown by molecular beam epitaxyElectronics Letters, 1997
- Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphireMaterials Science and Engineering: B, 1997
- Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodesJournal of Electronic Materials, 1997
- Blue and green electroluminescence from MBE grownGaN/InGaN heterostructuresElectronics Letters, 1996
- Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kineticsJournal of Applied Physics, 1996
- Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- On Surface Cracking of Ammonia for MBE Growth of GaNMRS Proceedings, 1996
- High transconductance-normally-off GaN MODFETsElectronics Letters, 1995
- InGaN/AlGaN blue-light-emitting diodesJournal of Vacuum Science & Technology A, 1995