Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films

26 May 2003

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 82 (21) , 3683-3685
https://doi.org/10.1063/1.1577410

Abstract

Highly conductive Al 0.65 Ga 0.35 N films were fabricated using indium–silicon codoping and a low growth temperature of 920 °C in the metalorganic chemical vapor deposition process. The Al 0.65 Ga 0.35 N:(Si,In ) layers exhibited an n-type carrier density as high as 2.5×10 19 cm −3 with an electron mobility of 22 cm 2 / V s , corresponding to a resistivity of 1.1×10 −4 Ω cm. Significantly higher resistivity values were measured for Al x Ga 1−x N:Si doped films with x⩾0.49 deposited at 1150 °C without indium, e.g., the Al 0.62 Ga 0.38 N:Si samples exhibited a maximum carrier concentration of 1.3×10 17 cm −3 and a resistivity of 6.2×10 −2 Ω cm. The electrical properties of the films are discussed in relation to the chemical concentrations of silicon and residual impurities in the films.

Keywords

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