Realization of crack-free and high-quality thick Al Ga1−N for UV optoelectronics using low-temperature interlayer
- 1 June 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 159-160, 405-413
- https://doi.org/10.1016/s0169-4332(00)00088-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Growth of GaN on highly mismatched substrate and its application to novel devicesDiamond and Related Materials, 1999
- Stress evolution during metalorganic chemical vapor deposition of GaNApplied Physics Letters, 1999
- Stress and Defect Control in GaN Using Low Temperature InterlayersJapanese Journal of Applied Physics, 1998
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaNJapanese Journal of Applied Physics, 1998
- Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregationJournal of Electronic Materials, 1997
- Structural Properties of Nitrides Grown by Omvpe on Sapphire SubstrateMRS Proceedings, 1997
- Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPEJournal of the Electrochemical Society, 1990
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986