Effects of Implanted Materials on Impurity-Induced Layer Disordering in Strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs Quantum Well Structure
- 1 October 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (10B) , L1364
- https://doi.org/10.1143/jjap.36.l1364
Abstract
The impurity-induced layer disordering in B- or Si-implanted Ga0.8In0.2As/Ga x In1- x As y P1- y /Ga0.51In0.49P /GaAs quantum well structure has been studied. The wavelength shift of the photoluminescence peak and the degree of intermixing can be determined by the type and energy of implanted ions with followed annealing at the temperature of 900° C. A photoluminescence peak shift of 70 meV was obtained by 120 keV Si-implantation and annealing at 900° C. The diffused interface was also studied by cross sectional transmission electron microscopy.Keywords
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