VHF-GD a-Si:H Films Prepared at Very Low Temperature
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The origin of metastable states in a-Si:HSolar Cells, 1988
- Mechanisms of Plasma Induced Silicon Deposition and the Control of the Properties of the DepositMRS Proceedings, 1988
- Study of surface/interface and bulk defect density in a-Si:H by means of photothermal deflection spectroscopy and photoconductivityJournal of Non-Crystalline Solids, 1987
- Influence of plasma excitation frequency fora-Si:H thin film depositionPlasma Chemistry and Plasma Processing, 1987
- Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasmaJournal of Non-Crystalline Solids, 1983
- The role of hydrogen in a-Si:H — results of evolution and annealing studiesJournal of Non-Crystalline Solids, 1983
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Relation between silicon-hydrogen complexes and microvoids in amorphous silicon films from IR absorptionAIP Conference Proceedings, 1981
- Preparation of glow discharge amorphous silicon for passivation layersThin Solid Films, 1981