ZnSe p-n junctions produced by metalorganic molecular-beam epitaxy

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Abstract
The p‐n junction in nitrogen‐doped p‐type ZnSe/undoped n‐type ZnSe on n‐type GaAs (100) is successfully produced by metalorganic molecular‐beam epitaxy. p‐type conduction of ZnSe is achieved as a consequence of high nitrogen doping (5×1018–1×1019 cm−3). The data points of C−2 (C: capacitance) against voltage of the p‐n junction are approximated by a straight line and the diffusion potential estimated from the plots is about 2.4 eV. Electron‐beam‐induced current also directly demonstrates the formation of a ZnSe p–n junction. Furthermore, blue emission is observed from the 5‐V foward‐biased ZnSe p‐n junction at 77 K.