Enhanced diffusion and precipitation of iron in gold-doped polycrystalline silicon
- 15 September 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (6) , 1728-1732
- https://doi.org/10.1063/1.334164
Abstract
Decoration of grain boundaries by iron has been found possible at low temperature (600 °C and above) only if gold is present in the polycrystalline silicon sample. Evidence is presented that the gold increases the solubility of the iron rather than its diffusion constant. Without the gold present, the solubility of the iron is apparently too low. The presence of the iron is detected by the resulting high conductivity at low temperature along the grain boundary, with characteristics similar to impurity band conductivity. The effect is analogous to ‘‘piping’’ of gold-doped silicon during the diffusion of some donor impurities to form diodes or transistors.This publication has 22 references indexed in Scilit:
- Conductance along iron-doped silicon grain boundariesJournal of Applied Physics, 1984
- The effect of grain boundary shunt currents on mis solar cell performanceJournal of Electronic Materials, 1982
- Characteristics and origin of emitter-collector shorts, or “pipes”, in multi-emitter power transistorsSolid-State Electronics, 1973
- The influence of stationary dislocations and stacking faults on some transistor parametersSolid-State Electronics, 1971
- Diffusion Pipes in Silicon NPN StructuresJournal of the Electrochemical Society, 1969
- Impurity-induced pipes through diffused layers in siliconSolid-State Electronics, 1962
- Gold on Silicon SurfacesJournal of Applied Physics, 1958
- Gold in SiliconJournal of the Electrochemical Society, 1958
- Properties of Gold-Doped SiliconPhysical Review B, 1957
- Solubility and Diffusivity of Gold, Iron, and Copper in SiliconJournal of Applied Physics, 1956