In situ DC-plasma cleaning of silicon surfaces
- 1 November 1995
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 90 (3) , 297-302
- https://doi.org/10.1016/0169-4332(95)00166-2
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- In situ study of epitaxial CoSi2/Si(111) by ballistic-electron-emission microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Low temperature epitaxial growth by molecular beam epitaxy on hydrogen-plasma-cleaned silicon wafersThin Solid Films, 1994
- Adsorption of hydrogen and disilane on Si(100) and SiGe surfacesSurface Science, 1994
- Hydrogen cleaning of silicon wafers. Investigation of the wafer surface after plasma treatmentThin Solid Films, 1993
- Low-temperature in situ cleaning of silicon wafers with an ultra high vacuum compatible plasma sourceThin Solid Films, 1992
- Surface structure of Si(001) treated by hydrogen and argon electron cyclotron resonance plasmasApplied Surface Science, 1992
- H-induced surface restructuring on Si(100): Formation of higher hydridesPhysical Review B, 1991
- Comparative photoemission study of low-pressure hydrogen, silane, and disilane adsorption on Si(111)7×7Physical Review B, 1990
- Symmetry properties and band structure of surface states on the single-domain, hydrogen-chemisorbed Si(100) 2 × 1:H surfacePhysical Review B, 1988
- Adsorption of atomic hydrogen on clean cleaved silicon (111)Surface Science, 1983