High temperature thermally stable implant isolation for GaAs via void formation
- 9 March 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (10) , 1223-1225
- https://doi.org/10.1063/1.107412
Abstract
A new method of forming thermally stable high-resistivity regions is developed for device isolation in GaAs. For Al+-implanted epitaxial-layer structures, the sheet resistivity increases by about six orders of magnitude from the as-grown values, after annealing in the 700–900 °C range. This increase in resistivity is shown to correlate with the formation of voids. The creation of high resistivity via void formation is different from the conventional damage-induced isolation by H or O implantation. This type of isolation becomes ineffective once the lattice is annealed at high temperatures due to the annealing out of lattice damage between 400 and 700 °C. In contrast, voids are stable at high temperatures. The potential advantages of using such defects for device isolation will be discussed.Keywords
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