Growth and characterization of 4H–SiC in vertical hot-wall chemical vapor deposition
- 1 July 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 255 (1-2) , 136-144
- https://doi.org/10.1016/s0022-0248(03)01245-4
Abstract
No abstract availableKeywords
Funding Information
- New Energy and Industrial Technology Development Organization
- Japan Society for the Promotion of Science
- Ministry of Education, Culture, Sports, Science and Technology
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