Fast Epitaxial Growth of 4H–SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition
- 1 April 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (4B) , L374
- https://doi.org/10.1143/jjap.40.l374
Abstract
4H–SiC has been homoepitaxially grown on off-axis 4H–SiC(0001) at 1700°C by chimney-type vertical hot-wall chemical vapor deposition. Mirror-like surface morphology can be obtained with high growth rates up to 21 µm/h. Epitaxial growth under C-rich conditions at growth rates of 10–14 µm/h leads to enhanced macrostep formation but reduced doping and deep trap concentrations of 7.2×1014 cm-3 and 1.3×1013 cm-3, respectively. Good thickness and doping uniformities of 4% and 6%, respectively, are achieved with this growth technique.Keywords
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