Low-frequency noise sources in polysilicon emitter BJT's: influence of hot-electron-induced degradation and post-stress recovery
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (9) , 1647-1652
- https://doi.org/10.1109/16.405279
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Temperature dependence of emitter-base reverse stress degradation and its mechanism analyzed by MOS structuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Hot-electron-induced degradation and post-stress recovery of bipolar transistor gain and noise characteristicsIEEE Transactions on Electron Devices, 1992
- Strong Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors with Interfacial Oxide due to Fluctuations in Tunneling ProbabilitiesJapanese Journal of Applied Physics, 1992
- Location of low-frequency noise sources in submicrometer bipolar transistorsIEEE Transactions on Electron Devices, 1992
- An investigation of nonideal base currents in advanced self-aligned 'etched-polysilicon' emitter bipolar transistorsIEEE Transactions on Electron Devices, 1991
- Development of advanced CMOS-compatible bipolar transistor for BiCMOS technologyElectronics Letters, 1988
- Modeling hot-carrier effects in polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1988
- Location of 1/f noise sources in BJT's—II. ExperimentIEEE Transactions on Electron Devices, 1987
- Location of 1/f noise sources in BJT's and HBJT's—I. theoryIEEE Transactions on Electron Devices, 1986