Optimized second-harmonic generation in asymmetric double quantum wells
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 32 (8) , 1334-1346
- https://doi.org/10.1109/3.511546
Abstract
No abstract availableKeywords
This publication has 44 references indexed in Scilit:
- MULTIBAND FINITE ELEMENT MODELING OF WAVEFUNCTION-ENGINEERED ELECTRO-OPTICAL DEVICESJournal of Nonlinear Optical Physics & Materials, 1995
- Calculations of second-order nonlinear optical susceptibilities in III-V and II-VI semiconductor heterostructuresPhysical Review B, 1994
- Phonon-assisted Γ-Xtransfer in (001)-grown GaAs/AlAs superlatticesPhysical Review B, 1994
- Quasi-phase-matched second harmonic generation: tuning and tolerancesIEEE Journal of Quantum Electronics, 1992
- Intersubband absorption line broadening in semiconductor quantum wells: Nonparabolicity contributionPhysical Review B, 1991
- Temperature dependence of intersubband absorption in InGaAs/InAlAs multiquantum wellsJournal of Applied Physics, 1990
- Inter-sub-band absorption in GaAs/AlGaAs quantum wells between 4.2 K and room temperatureSemiconductor Science and Technology, 1988
- Resonance spectroscopy of InGaAs/InP quantum well sub-bandsSemiconductor Science and Technology, 1988
- Experimental determination of hot-carrier scattering processes in AlxGa1−xAsApplied Physics Letters, 1987
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985