High performance InGaAs/GaAs quantum well infrared photodetectors
- 20 June 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (25) , 3431-3433
- https://doi.org/10.1063/1.111232
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Very long wavelength InxGa1−xAs/GaAs quantum well infrared photodetectorsApplied Physics Letters, 1994
- Improved performance of quantum well infrared photodetectors using random scattering optical couplingApplied Physics Letters, 1994
- In situ scanning-tunneling-microscopy studies of current driven mass transport in AgJournal of Applied Physics, 1993
- 19 μm cutoff long-wavelength GaAs/AlxGa1−xAs quantum-well infrared photodetectorsJournal of Applied Physics, 1992
- Importance of the upper state position in the performance of quantum well intersubband infrared detectorsApplied Physics Letters, 1991
- Extended long-wavelength λ=11–15-μm GaAs/AlxGa1−xAs quantum-well infrared photodetectorsJournal of Applied Physics, 1991
- InGaAs/InP long wavelength quantum well infrared photodetectorsApplied Physics Letters, 1991
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsApplied Physics Letters, 1990
- Photoexcited Coherent Tunneling in a Double-Barrier SuperlatticePhysical Review Letters, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987