Extrinsic Gettering Via the Controlled Introduction of Misfit Dislocations
- 1 January 1984
- book chapter
- Published by ASTM International
- p. 272-282
- https://doi.org/10.1520/stp32658s
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- A Survey of Iron Contamination in Silicon Substrates and Its Impact on Circuit YieldJournal of the Electrochemical Society, 1982
- A Neutron Activation Analysis Study of the Sources of Transition Group Metal Contamination in the Silicon Device Manufacturing ProcessJournal of the Electrochemical Society, 1981
- Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon WafersJapanese Journal of Applied Physics, 1980
- Gettering of surface and bulk impurities in Czochralski silicon wafersApplied Physics Letters, 1978
- Dislocation pinning effect of oxygen atoms in siliconApplied Physics Letters, 1977
- Critical microstructure for ion-implantation gettering effects in siliconApplied Physics Letters, 1977
- Intrinsic gettering by oxide precipitate induced dislocations in Czochralski SiApplied Physics Letters, 1977
- Nucleation of CuSi precipitate colonies in oxygen-rich siliconApplied Physics Letters, 1976
- Elimination of Oxidation‐Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers: I . Phosphorus Diffusion‐Induced Misfit DislocationsJournal of the Electrochemical Society, 1975
- Capillary Osmosis in Electrolyte SolutionsJournal of the Electrochemical Society, 1975