Modeling the breakdown and breakdown statistics of ultra-thin SiO2 gate oxides
- 1 November 2001
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 59 (1-4) , 149-153
- https://doi.org/10.1016/s0167-9317(01)00658-x
Abstract
No abstract availableKeywords
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