Trends in ion implantation in silicon VLSI technology
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 299-306
- https://doi.org/10.1016/s0168-583x(87)80061-7
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Depth distribution of secondary defects in 2-MeV boron-implanted siliconJournal of Applied Physics, 1986
- Monte Carlo Calculation of One- and Two-Dimensional Particle and Damage Distributions for Ion-Implanted Dopants in SiliconIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
- Calculation of Channeling Effects During Ion Implantation Using the Boltzmann Transport EquationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
- High energy ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Rapid thermal annealing of ion-implanted semiconductorsJournal of Applied Physics, 1984
- Mechanisms of damage recovery in ion implanted SiO2Journal of Applied Physics, 1984
- High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into SiliconJapanese Journal of Applied Physics, 1984
- Formation Kinetics of Niobium and Molybdenum Silicides Induced by Ion BombardmentJapanese Journal of Applied Physics, 1984
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982
- Theoretical Considerations on Lateral Spread of Implanted IonsJapanese Journal of Applied Physics, 1972