Calculation of Channeling Effects During Ion Implantation Using the Boltzmann Transport Equation
- 1 October 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 4 (4) , 362-368
- https://doi.org/10.1109/tcad.1985.1270133
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Monte Carlo Simulation of Ion Implantation in Crystalline Silicon Using MarloweJournal of the Electrochemical Society, 1988
- Shallow boron junctions implanted in silicon through a surface oxideIEEE Electron Device Letters, 1984
- Channeling in low energy boron ion implantationApplied Physics Letters, 1984
- Vectorized Monte Carlo calculation for the transport of ions in amorphous targetsIEEE Transactions on Electron Devices, 1983
- Semiclassical approach to channeling and dechannelingRadiation Effects, 1981
- An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targetsJournal of Applied Physics, 1980
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- A diffusion calculation of axial dechanneling in Si and GeRadiation Effects, 1980
- Angular sensitivity of controlled implanteddoping profilesPublished by National Institute of Standards and Technology (NIST) ,1978
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974