H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Amorphous Solid without Low Energy ExcitationsPhysical Review Letters, 1997
- Hot wire deposited hydrogenated amorphous silicon solar cellsAIP Conference Proceedings, 1997
- Observation of Improved Structural Ordering in Low H Content, Hot wire Deposited a-Si:HMRS Proceedings, 1997
- New Hydrogen Distribution ina-Si:H: An NMR StudyPhysical Review Letters, 1996
- Plasma Post-Hydrogenation of Hydrogenated Amorphous Silicon and GermaniumMRS Proceedings, 1996
- Hydrogen chemical potential and structure ofa-Si:HPhysical Review B, 1991
- A comparative study of the light-induced defects in intrinsic amorphous and microcrystalline silicon deposited by remote plasma enhanced chemical vapor depositionAIP Conference Proceedings, 1991
- Effects of deformation on hydrogen permeation in austenitic stainless steelsActa Metallurgica, 1986
- A SIMS analysis of deuterium diffusion in hydrogenated amorphous siliconApplied Physics Letters, 1978