Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon
- 1 November 2008
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 517 (1) , 75-79
- https://doi.org/10.1016/j.tsf.2008.08.073
Abstract
No abstract availableKeywords
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