Contactless Measurement of Short Carrier Lifetime in Heat-Treated N-Type Silicon
- 1 March 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (3R) , 322
- https://doi.org/10.1143/jjap.23.322
Abstract
Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at E v +0.39 eV acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0.07 µsec, and resistivity-lifetime products, ρτ=0.1 Ωcm · µsec, have been achieved.Keywords
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