The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT)
Open Access
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 33 (6) , 1428-1434
- https://doi.org/10.1109/tns.1986.4334618
Abstract
The effects of neutrons on the operating characteristics of Insulated Gate Bipolar Transistors (IGBT) are described. Experimental results are presented for devices that have been irradiated up to a fluence of 1013 neutrons/cm2, and an analytical model is presented which explains the observed effects. It is found that the on-state voltage increases, the switching time decreases, and the saturation current decreases with increasing neutron fluence. For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density. The effects of neutrons on the IGBT are compared with the known effects on power MOSFETs, and it is shown that the IGBT characteristics begin to degrade at a fluence that is an order of magnitude less than the fluence at which the power MOSFET begins to degrade.Keywords
This publication has 17 references indexed in Scilit:
- A Performance Trade-Off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime ReductionIEEE Transactions on Power Electronics, 1987
- Comparison of neutron and electron irradiation for controlling IGT switching speedIEEE Transactions on Electron Devices, 1985
- Shorter turn-off times in insulated gate transistors by proton implantationIEEE Electron Device Letters, 1985
- Neutron Irradiation as a Means of Reducing the Incidence of Radiation Induced Breakdown in a Radiation Hard Power MOSFETIEEE Transactions on Nuclear Science, 1985
- Insulated gate transistor modeling and optimizationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- An Investigation into Radiation Induced Second Breakdown in N Channel Power MOSFETsIEEE Transactions on Nuclear Science, 1984
- The Effect of Ionizing Radiation on the Breakdown Voltage of Power MOSFETSIEEE Transactions on Nuclear Science, 1983
- Additional Power VMOS Radiation Effects StudiesIEEE Transactions on Nuclear Science, 1980
- Combined Neutron and Thermal Effects on Bipolar Transistor GainIEEE Transactions on Nuclear Science, 1979
- Stable-Damage Comparisons for Neutron-Irradiated SiliconIEEE Transactions on Nuclear Science, 1973