Ellipsometric measurements of molecular-beam-epitaxy-grown semiconductor multilayer thicknesses: A comparative study
- 15 December 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (12) , 4867-4871
- https://doi.org/10.1063/1.338992
Abstract
Variable angle of incidence spectroscopic ellipsometry, cross‐sectional transmission electron microscopy, and Rutherford backscattering are used to measure heterojunction layer thicknesses in the same AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits. Two additional samples were implanted with 750‐keV Ga ions to fluences of 5×1015 and 1016 cm−2, respectively, and results of diagnostics measurements by the three techniques compared. The three techniques are found to complement each other in providing useful information.This publication has 11 references indexed in Scilit:
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