Room-temperature operation of patterned quantum-dot lasers fabricated by electron beam lithography and selective area metal-organic chemical vapor deposition
- 25 April 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 17 (5) , 935-937
- https://doi.org/10.1109/lpt.2005.844555
Abstract
We have developed a quantum-dot fabrication process which allows for explicit definition of the location and lateral dimension of quantum dots using electron beam lithography and selective area metal-organic chemical vapor deposition. We have demonstrated the first reported room-temperature operation of a patterned quantum-dot edge-emitting laser based on this fabrication technique.Keywords
This publication has 17 references indexed in Scilit:
- Dense uniform arrays of site-controlled quantum dots grown in inverted pyramidsApplied Physics Letters, 2004
- High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron rangePublished by SPIE-Intl Soc Optical Eng ,2003
- High temperature continuous wave operation of InAs quantum dot lasers near 1.3 μmPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Nanoscale limited area growth of InAs islands on GaAs(001) by molecular beam epitaxyJournal of Applied Physics, 2002
- Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxyJournal of Crystal Growth, 2000
- Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxyApplied Physics Letters, 2000
- Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithographyApplied Physics Letters, 2000
- Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxyApplied Physics Letters, 1998
- Low voltage electron-beam lithography based InGaAs/GaAs quantum dot arrays with 1 meV luminescence linewidthsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growthApplied Physics Letters, 1994