Silicon waveguide sidewall smoothing by wet chemical oxidation
Top Cited Papers
- 22 August 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 23 (8) , 2455-2461
- https://doi.org/10.1109/jlt.2005.851328
Abstract
This paper reports a new and more efficient Si waveguide sidewall smoothing process using wet chemical oxidation. Sidewall roughness is a major source of loss and an impediment to realizing high-transmission Si waveguides. The postetch multistepped approach allows for efficient smoothing (in terms of roughness amplitude reduction to material consumption) by continuous oxidation in the fast reaction-limited regime. This method reduces waveguide transmission loss without sacrificing dimensional integrity or thermal budget. In this proof-of-concept work, Si waveguide sidewall loss has been reduced from 9.2 to 1.9 dB/cm.Keywords
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