Observations of GaAs/CaF2 heterointerface formation by electron beam surface modification and its effects
- 1 June 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 117-118, 753-757
- https://doi.org/10.1016/s0169-4332(97)80177-8
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Effects of Electron Beam Exposure Conditions on the Surface Modification of CaF2(111) for Heteroepitaxy of GaAs/CaF2 StructureJapanese Journal of Applied Physics, 1996
- Optimization of GaAs epitaxy on CaF2/Si(111) substratesJournal of Crystal Growth, 1994
- Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth MethodJapanese Journal of Applied Physics, 1991
- Photoluminescence from GaAs/CaF2/Si Structure Grown by Electron-Beam Exposure (EBE) and Epitaxy MethodJapanese Journal of Applied Physics, 1991
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF2/Si StructuresJapanese Journal of Applied Physics, 1988
- Antiphase disorder in epitaxial GaAs films grown on CaxSr1−xF2 (100) with higher crystallographic symmetryApplied Physics Letters, 1986
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2 and GaAsJapanese Journal of Applied Physics, 1986
- Growth of semiconductor/insulator structures: GaAs/fluoride/GaAs (001)Journal of Vacuum Science & Technology B, 1985
- GaAs/(Ca,Sr)F2/(001) GaAs lattice-matched structures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1983