Layer interdiffusion in Se-doped AlxGa1−xAs-GaAs superlattices
- 24 August 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (8) , 581-583
- https://doi.org/10.1063/1.98354
Abstract
Transmission electron microscopy and carrier concentration measurements are used to characterize the layer interdiffusion (Al‐Ga interdiffusion) mechanism of a Se‐doped AlxGa1−xAs‐GaAs superlattice (SL) under high‐temperature annealing. By varying the annealing environment and comparing the results with similarly annealed undoped SL’s and Mg‐doped SL’s, we find that the layer interdiffusion occurs through interaction of the Se impurity with native defects associated with As‐rich conditions, the most likely of which is the column III vacancy.Keywords
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