In-situ low-temperature (600°C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth
- 1 November 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 289 (1-2) , 192-198
- https://doi.org/10.1016/s0040-6090(96)08841-4
Abstract
No abstract availableKeywords
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