Structural characterization of low temperature Epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM
- 1 February 1993
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (2) , 247-253
- https://doi.org/10.1007/bf02665034
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Silicon Homoepitaxy by Rapid Thermal Processing Chemical Vapor Deposition (RTPCVD)—A ReviewJournal of the Electrochemical Society, 1991
- A multichamber single-wafer chemical vapor deposition reactor and electron cyclotron resonance plasma for flexible integrated circuit manufacturingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Defect microstructure in low temperature epitaxial silicon grown by RPCVDJournal of Electronic Materials, 1990
- Cross-sectional TEM characterization of low temperature (750-800°C) epitaxial silicon by very low pressure (6 mTorr) chemical vapor deposition with and without plasma enhancementJournal of Electronic Materials, 1988
- Oxidation-induced stacking faults in silicon. I. Nucleation phenomenonJournal of Applied Physics, 1974
- Oxidation-induced stacking faults in silicon. II. Electrical effects in P N diodesJournal of Applied Physics, 1974
- Effects of Grown-ln and Process-Induced Defects in Single Crystal SiliconJournal of the Electrochemical Society, 1972