Implantation temperature dependent distribution of NiSi2 formed by ion beam synthesis in silicon
- 31 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (22) , 2795-2797
- https://doi.org/10.1063/1.109212
Abstract
The formation and distribution of NiSi2 in (111) silicon by Ni‐ion implantation with a fluence of 1.1×1017 cm−2 and an energy of 90 keV is studied as a function of the temperature during implantation. For temperatures below 200 °C, a buried layer of NiSi2 precipitates is formed. Increasing the temperature gradually from 200 to 350 °C leads first to the formation of a double buried NiSi2 layer which with increasing temperature evolves into an epitaxial NiSi2 surface layer. A tentative model to explain for the observed anomalous behavior is presented.Keywords
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