Synthesis of NiSi2by 6 MeV Ni implantation into silicon
- 1 December 1988
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 3 (6) , 1238-1246
- https://doi.org/10.1557/jmr.1988.1238
Abstract
Six MeV high-dose Ni implantation into silicon has been applied to synthesize deep-buried metallic layers. These layers have been analyzed by optical reflectivity and spreading resistance depth profiling as well as transmission electron microscopy and cross-section transmission electron microscopy. Already in the as-implanted state, at target temperatures of 450 K and doses above 1017Ni/cm2, epitaxial precipitates of NiSi2are formed. They grow in type-A and type-B orientations. In addition to these polyhedral crystallites, thin NiSi2platelets on {111} lattice planes exist. At a dose of 1.3 × 1018Ni/cm2, a continuous but highly defective layer of epitaxial NiSi2is formed by coalescence of mainly type-A precipitates at the maximum of the Ni profile. Investigations indicate that damage gettering of nickel atoms as well as the atomic density increase during implantation influence the depth distribution of implanted metal atoms. Moreover, a suppression of silicon amorphization by nickel is evident.Keywords
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