Electrical effects of atomic hydrogen incorporation in GaAs-on-Si
- 1 January 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (1) , 347-353
- https://doi.org/10.1063/1.342547
Abstract
We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs‐on‐Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n‐type (2×1017 cm−3) GaAs‐on‐Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H‐implanted material, in comparison to 150 °C for the plasma‐hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping in the GaAs close to the heterointerface is shown to occur at stacking faults and microtwins, in addition to extended dislocations.This publication has 15 references indexed in Scilit:
- Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealingApplied Physics Letters, 1987
- Hydrogenation of GaAs on Si: Effects on diode reverse leakage currentApplied Physics Letters, 1987
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Activation characteristics and defect structure in Si-implanted GaAs-on-SiApplied Physics Letters, 1987
- Passivation of Si donors and D X centers in AlGaAs by hydrogen plasma exposureApplied Physics Letters, 1987
- Ion implantation in GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposureApplied Physics Letters, 1986
- Metalorganic chemical vapor deposition of GaAs on Si for solar cell applicationsJournal of Crystal Growth, 1986
- Donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1985
- Transmission electron microscopy of extended crystal defects in proton bombarded and annealed gaasRadiation Effects, 1983