Schottky barriers and interface structure at silicide-silicon interfaces
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 56-58, 525-530
- https://doi.org/10.1016/0169-4332(92)90282-3
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Electronic structure of Si(111)-(111)A-type andB-type interfacesPhysical Review B, 1990
- The Schottky barrier height at the NiSi2-Si(111) interfaceSemiconductor Science and Technology, 1989
- Epitaxial silicide interfaces: Fabrication and propertiesJournal of Vacuum Science & Technology A, 1989
- New Silicide Interface Model from Structural Energy CalculationsPhysical Review Letters, 1988
- Structure determination of the:Si(111) interface by x-ray standing-wave analysisPhysical Review B, 1987
- Electronic structure and properties of Ni-Si(001) and Ni-Si(111) reactive interfacesPhysical Review B, 1984
- The atomic structure of the NiSi2-(001)Si interfacePhilosophical Magazine A, 1984
- Ideal Al-Ge(001) interface: From chemisorption to metallization of the Al overlayerPhysical Review B, 1984
- Direct determination of atomic structure at the epitaxial cobalt disilicide on (111) Si interface by ultrahigh resolution electron microscopyApplied Physics Letters, 1982
- Surface electronic structure of silicon dioxidePhysical Review B, 1982