Basic dislocation contrasts in SEM-CL/EBIC on III–V semiconductors
- 31 May 1994
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 24 (1-3) , 115-120
- https://doi.org/10.1016/0921-5107(94)90310-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Studies on carrier recombination at dislocations in compound semiconductors by combined SEM-CL/EBIC measurementsPhysica Status Solidi (a), 1993
- A contribution to the theory of beam-induced current characterization of dislocationsJournal of Applied Physics, 1991
- Monte Carlo simulation of CL and EBIC contrasts for isolated dislocationsScanning, 1990
- Kilovolt electron energy loss distribution in SiJournal of Physics D: Applied Physics, 1988
- A theoretical study of the determination of the depth of a dislocation by combined use of EBIC and CL techniqueUltramicroscopy, 1986
- Kilovolt Electron Energy Loss Distribution in GaAsPPhysica Status Solidi (a), 1984
- A contribution to the theory of the ebic contrast of lattice defects in semiconductorsUltramicroscopy, 1981