Epitaxial aluminum carbide formation in 6H–SiC by high-dose Al+ implantation
- 3 May 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (18) , 2602-2604
- https://doi.org/10.1063/1.123910
Abstract
Aluminum carbide precipitates are formed after Al ion implantation with dose 3×1017 cm−2 at 500 °C into single crystalline 6H–SiC. The aluminum carbide (Al4C3) precipitates are in epitaxial relation with 6H–SiC matrix, having the following orientation relation, [0001]6H–SiC//[0001]Al4C3, and [112̄0]6H–SiC//[112̄0]Al4C3, as transmission electron microscopy reveals. The aluminum carbide appears around the maximum of the Al depth distribution. Silicon precipitates were also detected in the same zone.Keywords
This publication has 12 references indexed in Scilit:
- Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantationApplied Physics Letters, 1999
- Crystallization and surface erosion of SiC by ion irradiation at elevated temperaturesJournal of Applied Physics, 1999
- Reinforcement coatings and interfaces in aluminium metal matrix compositesJournal of Materials Science, 1998
- Aluminium implantation of p-SiC for ohmic contactsDiamond and Related Materials, 1997
- Doping of SiC by Implantation of Boron and AluminumPhysica Status Solidi (a), 1997
- The Physics of Ohmic Contacts to SiCPhysica Status Solidi (b), 1997
- Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A reviewSolid-State Electronics, 1996
- Ion Implantation and Annealing Effects in Silicon CarbideMRS Proceedings, 1996
- Effects of implantation temperature on the structure, composition, and oxidation resistance of aluminum-implanted SiCJournal of Materials Research, 1995
- Chemistry and Structure of Beta Silicon Carbide Implanted with High‐Dose AluminumJournal of the American Ceramic Society, 1993