Demonstration of motor drive with SiC normally-off IBMOSFET/SBD power converter

1 May 2007

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 289-292
https://doi.org/10.1109/ispsd.2007.4294989

Abstract

Normally-off power MOSFET with low R ons has been developed. IEMOSFET on 4H-SiC carbon-face wafer exhibits an extremely low R ons of 1.8mΩcm 2 with a blocking voltage of 660V. The effective channel mobility of this device is 90 cm 2 /Vs which corresponds to the channel resistance of 0.8mΩcm 2 . A step-down converter was fabricated with the normally-off IEMOSFET and SBD, and the operation of 400 W DC motor drive was successfully observed at room temperature.

Keywords

This publication has 4 references indexed in Scilit:

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