Low on-resistance in inversion channel IEMOSFET formed on 4H-SiC C-face substrate
- 8 August 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The inversion channel IEMOSFET has been fabricated on the 4H-SiC carbon-face substrate. The channel resistance was successfully reduced to 1 mOmegacm2 due to the high inversion channel mobility on the carbon-face epitaxial layer. The extremely low specific on-resistance of 2.7 mOmegacm2 was achieved with the blocking voltage of 700V. This specific on-resistance is the lowest in the normally-off MOSFET with the blocking voltage higher than 600 VKeywords
This publication has 8 references indexed in Scilit:
- 4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFETMaterials Science Forum, 2006
- 8.5-$hbox mOmega cdot hbox cm^2$600-V Double-Epitaxial MOSFETs in 4H–SiCIEEE Electron Device Letters, 2004
- Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001̄) faceApplied Physics Letters, 2004
- 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial ApplicationsMaterials Science Forum, 2003
- 10 A, 2.4 kV Power DiMOSFETs in 4H-SiCIEEE Electron Device Letters, 2002
- High-Current, NO-Annealed Lateral 4H-SiC MOSFETsMaterials Science Forum, 2002
- High channel mobility in normally-off 4H-SiC buried channel MOSFETsIEEE Electron Device Letters, 2001
- Counter-doped MOSFETs of 4H-SiCIEEE Electron Device Letters, 1999