Experimental study of the GaP-Si interface

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Abstract
The interface formation between cleaved GaP(110) substrates and Si overlayers was studied with synchrotron-radiation photoemission techniques. The experimental information included measurements of the valence- and conduction-band discontinuities and of the substrate band bending. In particular, we searched for possible overlayer-ordering effects on the discontinuities in annealed interfaces. No annealing-induced discontinuity changes were found within the experimental uncertainty of 0.1 eV. On the contrary, the substrate band bending was drastically changed by the annealing process.