Evidence for semiconductor-semiconductor interface states: Si(111) (2 × 1)-Ge
- 15 November 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 24 (10) , 6174-6177
- https://doi.org/10.1103/physrevb.24.6174
Abstract
A direct correlation was found for the first time between theory and experiments on the localized electronic states at a semiconductor-semiconductor interface. The investigation involved synchrotron-radiation photoemission experiments and tight-binding calculations on Ge adatoms on cleaved Si substrates. The theoretically predicted interface states in a region 4-9 eV below the Fermi level were detected in the experimental spectra. These occupied states and their unoccupied counterparts have a fundamental influence on the localized one-electron transitions and on relevant heterojunction parameters in transport processes.Keywords
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