Numerical Analysis of the Transport Phenomena in MOCVD Process

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Abstract
The transport properties of the convective fluid motion in a MOCVD reactor are investigated using a numerical method. For the purpose of a uniform deposition rate on a substrate with a diameter of 3 inches, a combinatorial optimization was carried out concerning the pressure, the mass-flow rate and the reactor's geometry. Under the optimal condition, a deposition uniformity within ±0.6% is attainable. The results also reveal a variety of flow configurations, depending on the relative magnitudes of the forced and natural convections. When the volumetric velocity of the supplied gas decreases, a recirculating vortex appears on the upstream side of the deposition surface. The numerical results suggest that the appearance of the vortex is governed by F r/R e when R e<R e c and by F r when R e>R e c.