Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's
- 1 April 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (4) , 738-743
- https://doi.org/10.1109/16.372079
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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