Effects of process parameter distributions and ion strike locations on SEU cross-section data (CMOS SRAMs)
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1804-1811
- https://doi.org/10.1109/23.273476
Abstract
The effect of statistical parameter distributions and stochastic ion strike locations in hardened memory arrays on observed SEU cross-section data is discussed. Application of numerical analysis to the parasitic bipolar gain distributions in SIMOX SRAMs and the introduction of an effective critical charge based on sensitivities to ion strike locations, explains and quantifies the non-saturating behavior of measured cross-section curves in SOI and other hardened memories.This publication has 7 references indexed in Scilit:
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